題目：Ab initio carrier dynamics and charge transport in semiconductors
 

報(bào)告人：周金健 博士 加州理工學(xué)院
時(shí) 間：2017年1月11日(周三)下午14:30
地 點(diǎn)：北京理工大學(xué)中心教學(xué)樓610
 

摘要：
In polar semiconductors and oxides, the long-range nature of the electron-phonon interaction is a bottleneck to compute charge transport from first principles. In this talk, I will present an efficient ab initio scheme to compute and converge the electron-phonon relaxation times and electron mobility in polar materials. We applied our approach to GaAs, where using the Boltzmann equation with state-dependent relaxation times, we computed mobilities in excellent agreement with experiment. I will also show real-time simulations of hot carrier relaxation in GaN from first-principles.